Science Advances

This PDF file includes:

• section S1. Device fabrication
  
• section S2. Optical interferometry measurement system
  
• section S3. Electrical tuning of device resonance
  
• section S4. Power handling, mass sensitivity, and frequency stability
  
• section S5. Nanomechanical tuning and sensing of device strain and bandgap
  
• section S6. Measuring nonlinearity and estimating critical amplitude
  
• section S7. Translation of voltage fluctuations into frequency instability
  
• section S8. Comparison of DR in 1D and 2D NEMS resonators
  
• fig. S1. Calculated displacement versus reflectance values for 1L to 3L MoS₂ resonators.
  
• fig. S2. Calculated displacement-to-reflectance responsivity (ℜ_Ref) and measured displacement-to-voltage responsivity (ℜ_V) values for 1L to 3L MoS₂ resonators.
  
• fig. S3. Thermomechanical resonance with qualify (Q) factor exceeding 1000.
  
• fig. S4. Thermomechanical vibrations with distinct signatures of digitized thicknesses (number of layers) as a function of f_res and Q.
  
• fig. S5. Electrical gate turning of higher-mode resonances.
  
• fig. S6. FOM for frequency tuning: Comparison across reported 2D NEMS devices.
  
• fig. S7. Schematic for calculating the total surface area on a deformed membrane.
  
• fig. S8. Measured DR in 1D and 2D resonators operated at room temperature.
  
• fig. S9. Resonance frequency scaling with device diameter D and MoS₂ thickness t.
  
• table S1. FOM for frequency tuning.
  
• table S2. List of devices with measured nonlinear characteristics.
  
• table S3. DRs measured in 1D and 2D resonators.
  
• References (68–80)

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