Science Advances
Supplementary Materials
This PDF file includes:
- section S1. Device fabrication
- section S2. Optical interferometry measurement system
- section S3. Electrical tuning of device resonance
- section S4. Power handling, mass sensitivity, and frequency stability
- section S5. Nanomechanical tuning and sensing of device strain and bandgap
- section S6. Measuring nonlinearity and estimating critical amplitude
- section S7. Translation of voltage fluctuations into frequency instability
- section S8. Comparison of DR in 1D and 2D NEMS resonators
- fig. S1. Calculated displacement versus reflectance values for 1L to 3L MoS2 resonators.
- fig. S2. Calculated displacement-to-reflectance responsivity (ℜRef) and measured displacement-to-voltage responsivity (ℜV) values for 1L to 3L MoS2 resonators.
- fig. S3. Thermomechanical resonance with qualify (Q) factor exceeding 1000.
- fig. S4. Thermomechanical vibrations with distinct signatures of digitized thicknesses
(number of layers) as a function of fres and Q.
- fig. S5. Electrical gate turning of higher-mode resonances.
- fig. S6. FOM for frequency tuning: Comparison across reported 2D NEMS devices.
- fig. S7. Schematic for calculating the total surface area on a deformed membrane.
- fig. S8. Measured DR in 1D and 2D resonators operated at room temperature.
- fig. S9. Resonance frequency scaling with device diameter D and MoS2 thickness t.
- table S1. FOM for frequency tuning.
- table S2. List of devices with measured nonlinear characteristics.
- table S3. DRs measured in 1D and 2D resonators.
- References (68–80)
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