Science Advances

Supplementary Materials

This PDF file includes:

  • section S1. Device fabrication
  • section S2. Optical interferometry measurement system
  • section S3. Electrical tuning of device resonance
  • section S4. Power handling, mass sensitivity, and frequency stability
  • section S5. Nanomechanical tuning and sensing of device strain and bandgap
  • section S6. Measuring nonlinearity and estimating critical amplitude
  • section S7. Translation of voltage fluctuations into frequency instability
  • section S8. Comparison of DR in 1D and 2D NEMS resonators
  • fig. S1. Calculated displacement versus reflectance values for 1L to 3L MoS2 resonators.
  • fig. S2. Calculated displacement-to-reflectance responsivity (ℜRef) and measured displacement-to-voltage responsivity (ℜV) values for 1L to 3L MoS2 resonators.
  • fig. S3. Thermomechanical resonance with qualify (Q) factor exceeding 1000.
  • fig. S4. Thermomechanical vibrations with distinct signatures of digitized thicknesses (number of layers) as a function of fres and Q.
  • fig. S5. Electrical gate turning of higher-mode resonances.
  • fig. S6. FOM for frequency tuning: Comparison across reported 2D NEMS devices.
  • fig. S7. Schematic for calculating the total surface area on a deformed membrane.
  • fig. S8. Measured DR in 1D and 2D resonators operated at room temperature.
  • fig. S9. Resonance frequency scaling with device diameter D and MoS2 thickness t.
  • table S1. FOM for frequency tuning.
  • table S2. List of devices with measured nonlinear characteristics.
  • table S3. DRs measured in 1D and 2D resonators.
  • References (68–80)

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