Science Advances

Supplementary Materials

This PDF file includes:

  • section S1. PL statistics and PL under high powers
  • section S2. Polarization statistics
  • section S3. Second-order correlation fitting procedure
  • section S4. Model to compare SPEs with and without PSS
  • section S5. Comparison between SPEs in pristine GaN and SPEs in GaN grown on PSS
  • section S6. Modeling of a proposed defect structure
  • fig. S1. PL statistics of GaN emitters and PL under high power.
  • fig. S2. Polarization statistics of GaN emitters.
  • fig. S3. Photon antibunching measurement of SPE1.
  • fig. S4. Model of SPE in GaN with PSS structure.
  • fig. S5. PLs and saturation curves of SPEs in pristine GaN.
  • fig. S6. Second-order autocorrelation function of five SPEs in pristine GaN.
  • fig. S7. PLs and saturation curves of SPEs grown on PSS.
  • fig. S8. Second-order autocorrelation function of five SPEs in GaN grown on PSS.
  • fig. S9. Span of ZPL wavelengths when the point defect in perfect h-GaN emits at 1450 nm nearby a cubic inclusion.
  • table S1. Summary of measured lifetimes and maximum counts of SPE A to E in pristine GaN and SPE a to e in GaN grown on PSS.
  • References (39–41)

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