Science Advances

Supplementary Materials

This PDF file includes:

  • section S1. Magnetization and magnetic susceptibility measurement
  • section S2. Two-channel model for calculating Kondo effect measurement
  • section S3. Charge accumulation dynamics
  • section S4. Transport properties measured for PIL gating with VG < 0
  • section S5. Gate dependence of AHE
  • section S6. Fe impurity–doped Pt films
  • section S7. Transport properties of PIL-gated palladium film
  • section S8. MR of pristine, conventional IL-gated, and PIL-gated Pt films
  • section S9. Gating cycles with sequential switch of the gating media between PIL and conventional IL
  • section S10. Optical and atomic force microscopy images of a typical Pt sample
  • section S11. Transport properties of PIL-gated gold film
  • fig. S1. Various kinds of PILs and their response to magnets.
  • fig. S2. Temperature variation of the magnetic properties of BMIMFeCl4.
  • fig. S3. Chronoamperometry measurement of PIL gating.
  • fig. S4. The transport measurement of PIL-gated Pt film under negative VG.
  • fig. S5. Comparison between Fe impurities contaminated and PIL-gated Pt thin films.
  • fig. S6. Low-temperature (T = 5 K) electrical transport of pristine and PIL-gated Pd thin films.
  • fig. S7. Comparison between low temperature (T < 40 K) MRs and B-dependent Rs under various gating conditions.
  • fig. S8. Optical and atomic force microscopy images of a typical Pt sample.
  • fig. S9. Gating cycles by switching the gating media between nonmagnetic IL and PIL on the same Pt film (t = 12.0 nm).
  • fig. S10. Transport properties of PIL-gated Au thin film.
  • table S1. Fitting parameters of the Kondo effect for films with different thicknesses.
  • References (57–62)

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