Science Advances

Supplementary Materials

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  • fig. S1. 1H NMR for coordination of acetylacetone on a cadmium precursor.
  • fig. S2. The photograph of vacuum-dried DMSO-based CdS and CdSe precursor solutions.
  • fig. S3. Metal-chalcogenide surface images were obtained by AFM.
  • fig. S4. Metal-chalcogenide surface images were obtained by FE-SEM.
  • fig. S5. Metal-chalcogenide surface images were obtained by an optical microscope.
  • fig. S6. Cross-sectional HRTEM image and diffraction pattern of the CdSe TFT.
  • fig. S7. RBS and XPS analysis of the CdSe films.
  • fig. S8. Transmittance of the metal-chalcogenide alloy films.
  • fig. S9. Characterization of the CdSe TFTs on the SiO2 substrate.
  • fig. S10. Grazing incident XRD peaks of 20-nm-thick CdSe films made with different types of solvent.
  • fig. S11. XRD peaks of the CdSe layer with precursor concentrations.
  • fig. S12. SIMS data of the CdSe layer with precursor concentrations.
  • fig. S13. Electrical mobility properties of the CdSe TFTs with precursor concentrations.
  • fig. S14. FE-SEM image of the CdSe films.
  • fig. S15. Characterization of the gate dielectric layer.
  • fig. S16. Characterization of the CdSe TFTs on Al2O3 dielectric.
  • fig. S17. Temperature dependence of field-effect mobility for an n-channel CdSe TFTs.
  • fig. S18. Electrical characteristics of the CdSe TFTs with different channel lengths (5, 10, 20, and 50 μm).
  • fig. S19. Characterization of the CdSe phototransistor.
  • fig. S20. Characterization of the Cd1−xZnxSe1−ySy phototransistors.
  • fig. S21. Characterization of the CdSe circuits.
  • fig. S22. Positive bias stress test of the CdSe TFTs.
  • table S1. Solution stability relation of the metal-chalcogenide precursor with the complexing agent.
  • table S2. Synthetic information of the metal-chalcogenide solutions.
  • table S3. Diffraction pattern distance, d-spacing, and Miller indices of the CdSe thin film.
  • table S4. Average saturation mobility of CdSe TFTs with different types of solvent.
  • References (56–58)

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