Science Advances

Supplementary Materials

This PDF file includes:

  • Supplementary Text
  • fig. S1. Comparison between calculations within the eight-band Kane model and by using the effective Hamiltonians for three-layer InAs/GaSb QWs.
  • fig. S2. Bandgap in QSHI state in asymmetrical three-layer InAs/GaInSb QWs.
  • table S1. Parameters involved in the effective Hamiltonian HInAs(kx, ky) for three-layer InAs/GaSb QWs with InAs geometry grown on GaSb buffer.
  • table S2. Parameters of the effective 2D Hamiltonian HGaSb(kx, ky) for three-layer InAs/GaSb QWs with GaSb geometry grown on GaSb buffer.

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