Science Advances

Supplementary Materials

This PDF file includes:

  • fig. S1. Chemical and structural characterization.
  • fig. S2. Device morphology and optoelectronic transport.
  • fig. S3. Control experiments on few-layer MoS2.
  • fig. S4. Photoresponse in PbS nanoplate with an 808-nm laser illumination.
  • fig. S5. The optoelectronic transport and optical memory.
  • fig. S6. Photoresponse performance.
  • fig. S7. Vg pulse–dependent erasing current.
  • fig. S8. Optoelectronic transport and on/off ratio.
  • fig. S9. Persistent photocurrent as a function of time after the laser pulse switches off.
  • fig. S10. Optoelectronic transport and optical memory.
  • fig. S11. Number of transferred electrons as a function of the Fermi level shift.
  • table S1. Memory performance of five devices.
  • note S1. Theoretical simulation of carrier injection to MoS2.
  • note S2. Dynamics analysis of Vg pulse erasing.
  • note S3. Roles of disorder states on the optical memory.
  • note S4. Photothermal effect or Schottky barrier effect.
  • References (36–43)

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