Science Advances

Supplementary Materials

This PDF file includes:

  • Supplementary Information
  • fig. S1. Fast transistor operation and switching: Gate capacitance CG as a function of gate voltage VGS for different frequencies.
  • fig. S2. Fast transfer characteristic acquisition.
  • fig. S3. Calculated attenuation length spectra for silicon oxide, tantalum oxide, and the multilayer dielectric based on National Institute of Standards and Technology database.
  • fig. S4. Accelerated recovery of ROXFET due to application of positive gate voltage.
  • table S1. Properties of a set of IGZO transistors with W = 320 μm and L = 20 μm and varying multilayer dielectric thickness.

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