Science Advances
Supplementary Materials
This PDF file includes:
- Materials characterization
- Photoresponse spectra as the function of applied bias and incident intensity
- Estimation of the temperature rise
- THz response characterization
- Ultrabroadband photoresponsivity operating at quasi-linear photoresponse conditions
- Noise characteristics of 1T-TaS2 devices
- Temporal response of the device after the femtosecond pulse excitations
- Fig. S1. Energy dispersive spectrum analysis of the 1T-TaS2 as-grown crystals.
- Fig. S2. In-plane IR spectra of the 1T-TaS2 measured at 300 and 78 K.
- Fig. S3. Optical images of 1T-TaS2 as-growth crystals and devices.
- Fig. S4. I-V characteristics of the device as the function of applied bias and incident intensity.
- Fig. S5. The estimated steady-state value of temperature rises for the illumination of ~1 W cm−2 at various wavelengths in our measurement range for a sample with the dimension ~ 780 μm × 23 μm × 6 μm.
- Fig. S6. THz response characterizations at λ = 118.8 μm.
- Fig. S7. Ultrabroadband photosensitivity operating at quasi-linear photoresponse conditions.
- Fig. S8. Noise current analysis for the 1T-TaS2 device at external bias 0.71 V.
- Fig. S9. Temporal response of the device after the 150-fs pulse excitations.
- Table S1. Parameters for 1T-TaS2, graphene, and topological insulator–based photodetectors.
- References (31–38)
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