Science Advances

Supplementary Materials

This PDF file includes:

  • Materials characterization
  • Photoresponse spectra as the function of applied bias and incident intensity
  • Estimation of the temperature rise
  • THz response characterization
  • Ultrabroadband photoresponsivity operating at quasi-linear photoresponse conditions
  • Noise characteristics of 1T-TaS2 devices
  • Temporal response of the device after the femtosecond pulse excitations
  • Fig. S1. Energy dispersive spectrum analysis of the 1T-TaS2 as-grown crystals.
  • Fig. S2. In-plane IR spectra of the 1T-TaS2 measured at 300 and 78 K.
  • Fig. S3. Optical images of 1T-TaS2 as-growth crystals and devices.
  • Fig. S4. I-V characteristics of the device as the function of applied bias and incident intensity.
  • Fig. S5. The estimated steady-state value of temperature rises for the illumination of ~1 W cm−2 at various wavelengths in our measurement range for a sample with the dimension ~ 780 μm × 23 μm × 6 μm.
  • Fig. S6. THz response characterizations at λ = 118.8 μm.
  • Fig. S7. Ultrabroadband photosensitivity operating at quasi-linear photoresponse conditions.
  • Fig. S8. Noise current analysis for the 1T-TaS2 device at external bias 0.71 V.
  • Fig. S9. Temporal response of the device after the 150-fs pulse excitations.
  • Table S1. Parameters for 1T-TaS2, graphene, and topological insulator–based photodetectors.
  • References (3138)

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