Science Advances

This PDF file includes:

• Materials characterization
• Photoresponse spectra as the function of applied bias and incident intensity
• Estimation of the temperature rise
• THz response characterization
• Ultrabroadband photoresponsivity operating at quasi-linear photoresponse conditions
• Noise characteristics of 1T-TaS₂ devices
• Temporal response of the device after the femtosecond pulse excitations
• Fig. S1. Energy dispersive spectrum analysis of the 1T-TaS₂ as-grown crystals.
• Fig. S2. In-plane IR spectra of the 1T-TaS₂ measured at 300 and 78 K.
• Fig. S3. Optical images of 1T-TaS₂ as-growth crystals and devices.
• Fig. S4. I-V characteristics of the device as the function of applied bias and incident intensity.
• Fig. S5. The estimated steady-state value of temperature rises for the illumination of ~1 W cm⁻² at various wavelengths in our measurement range for a sample with the dimension ~ 780 μm × 23 μm × 6 μm.
• Fig. S6. THz response characterizations at λ = 118.8 μm.
• Fig. S7. Ultrabroadband photosensitivity operating at quasi-linear photoresponse conditions.
• Fig. S8. Noise current analysis for the 1T-TaS₂ device at external bias 0.71 V.
• Fig. S9. Temporal response of the device after the 150-fs pulse excitations.
• Table S1. Parameters for 1T-TaS₂, graphene, and topological insulator–based photodetectors.
• References (31–38)

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