Science Advances

Supplementary Materials

The PDF file includes:

  • Table S1. Values of parameters of Si nanowire and medium used in the modeling.
  • Table S2. Optical and electrical properties of nanowires with different diameters obtained by simulation and calculation.
  • Note S1. Instant light responsiveness.
  • Note S2. Surface depletion effects in silicon nanowires.
  • Note S3. Light absorption and photoconductivity.
  • Note S4. Modeling the dependence of rotation spectrum on diameters of nanowires.
  • Note S5. Compatibility of the light modulation of nanowire rotation in ionic solution.
  • Fig. S1. Rotation spectra of nanowires made from silicon wafers of various n-doping densities.
  • Fig. S2. Light absorption of silicon nanowires.
  • Fig. S3. Temperature profile around a Si nanowire in water after 100-s exposure to 532-nm laser (127 mW cm−2).
  • Fig. S4. Experimental and modeling results of rotation spectra of nanowires with different dimensions in an AC E-field.
  • Fig. S5. Experimental result of the bright and dim rotation spectra of nanowires with 500 nm in diameter and 5 μm in length, made from p-type silicon wafer (0.1 to 0.6 ohm·cm).
  • Fig. S6. Experimental and simulation results of the bright and dim rotation spectra of intrinsic silicon nanowire (r = 500 nm; L = 5 μm) in solutions with various ionic strengths.
  • Legends for movies S1 to S13
  • Reference (40)

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Other Supplementary Material for this manuscript includes the following:

  • Movie S1 (.mp4 format). The silicon nanowire is made from n-doped silicon wafer (560 to 840 ohm·cm) and suspended in DI water.
  • Movie S2 (.mp4 format). Counterfield rotation acceleration under 2.5 kHz, 20 Vpp E-field, and 532-nm laser (127 mW cm−2).
  • Movie S3 (.mp4 format). Cofield to counterfield reversal under 50 kHz, 20 Vpp E-field, and 532-nm laser (127 mW cm−2).
  • Movie S4 (.mp4 format). Cofield acceleration under 0.5 MHz, 20 Vpp E-field, and 532-nm laser (127 mW cm−2).
  • Movie S5 (.mp4 format). Laser-initiated rotation of a nanowire with sub–100-nm diameter under 0.5 MHz, 20 Vpp E-field, and 532-nm laser (127 mW cm−2).
  • Movie S6 (.mp4 format). Rotation reversal of multiple nanowires under 25 kHz, 20 Vpp E-field, 532-nm laser (127 mW cm−2), and 0.5× play speed.
  • Movie S7 (.mp4 format). Multiple nanowires change from rotation to still under 100 kHz, 20 Vpp E-field, 532-nm laser (127 mW cm−2), and 0.5× play speed.
  • Movie S8 (.mp4 format). Cofield rotation acceleration of multiple nanowires under 0.5 MHz, 20 Vpp E-field, 532-nm laser (127 mW cm−2), and 0.5× play speed.
  • Movie S9 (.mp4 format). Multiple nanowires change from still to rotation under 2 MHz, 20 Vpp E-field, 532-nm laser (127 mW cm−2), and 0.5× play speed.
  • Movie S10 (.mp4 format). Dynamic rotation control of counterfield rotation acceleration by white light digital light processing under 10 kHz and 20 Vpp E-field.
  • Movie S11 (.mp4 format). Dynamic control of rotation reversal by white light digital light processing under 50 kHz and 20 Vpp E-field.
  • Movie S12 (.mp4 format). Dynamic control of cofield rotation acceleration by white light digital light processing under 0.5 MHz and 20 Vpp E-field.
  • Movie S13 (.mp4 format). Rotation of silicon and gold nanowires in a mixture under 5 kHz and stimulated by 532-nm a periodic laser (32 mW cm−2).

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