Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. Gate voltage dependence of TI resistance
  • Section S2. Doping of Gr by TIs
  • Section S3. Effect of spin absorption by TIs
  • Fig. S1. Gate dependence of TI resistance.
  • Fig. S2. Magnetotransport measurements in BS and BSTS.
  • Fig. S3. Electrical transport in Gr-TI heterostructures.
  • Fig. S4. Atomic force microscopy and Raman spectroscopy measurements of BS, BSTS, Gr, and Gr-TI heterostructures.
  • Fig. S5. Gate dependence of spin signals in another Gr-BS heterostructure device at room temperature.
  • Fig. S6. Gate dependence of spin signals in another Gr-BSTS heterostructure device at room temperature.
  • Fig. S7. Gr doping.
  • Fig. S8. Calculated spin lifetime due to spin absorption as a function of the Gr square resistance.
  • References (4952)

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