Science Advances

Supplementary Materials

This PDF file includes:

  • Surface characterization
  • FET fabrication
  • FET interface structure
  • Fig. S1. AFM characterization on 10 μm × 10 μm areal top surface of diamond:H/H2.3MoO2.5.
  • Fig. S2. XRD pattern obtained for the ALD thin film on diamond:H substrate.
  • Fig. S3. Fabrication procedure of diamond:H/HyMoO3−x MOSFET.
  • Fig. S4. Cross-section SEM of a diamond:H/HyMoO3 (10 nm)/Ti-Au (10 to 100 nm) prepared sample.

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