Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. Supplementary for device fabrication
  • Section S2. Characterization of the devices
  • Section S3. Supplementary for theoretical calculations
  • Section S4. Supplementary charge transport in PCP and OPE3 devices
  • Section S5. The performances for compared devices
  • Fig. S1. Fabrication procedure for the vertical molecular transistor.
  • Fig. S2. AFM and Raman characterizations.
  • Fig. S3. HR-XPS characterizations.
  • Fig. S4. Supplementary theoretical calculations.
  • Fig. S5. Charge transport in PCP devices.
  • Fig. S6. Charge transport in OPE3 devices.
  • Fig. S7. Temperature-dependent performances for PCP and OPE3.
  • Fig. S8. Supplementary gate performances for PCP and OPE3 transistors.
  • Fig. S9. Gate performances for compared graphene and C18 devices.
  • Table S1. Statistic conductance for PCP and OPE3 junctions.
  • References (33, 34)

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