Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. Determination of lattice constants for (Ge,Mn)Te thin films by x-ray diffraction
  • Section S2. Qualitative evaluation of EF in (Ge,Mn)Te
  • Section S3. Electronic transport properties of the (Ge,Mn)Te samples
  • Section S4. Temperature dependence of Hall resistivity
  • Section S5. Current-induced magnetization reversal for all samples
  • Section S6. Current-directional dependence of magnetization switching
  • Section S7. In-plane bias magnetic field dependence of magnetization switching
  • Section S8. Repeated injection of pulses lower than saturation current density
  • Section S9. The estimation of spin Hall efficiency
  • Section S10. Correction of current flow to buffer layers
  • Section S11. Magnetization measurement
  • Fig. S1. Reciprocal space analysis for the in- and out-of-plane lattice constants of (Ge,Mn)Te thin film.
  • Fig. S2. Calculated band structure of (Ge,Mn)Te for x = 0.08.
  • Fig. S3. Transport properties for all samples.
  • Fig. S4. Temperature dependence of Hall resistivity.
  • Fig. S5. Current-induced magnetization for all samples.
  • Fig. S6. Current-directional dependence of magnetization switching.
  • Fig. S7. In-plane bias magnetic field dependence of magnetization switching.
  • Fig. S8. Repeated injection of pulses lower than saturation current density.
  • Fig. S9. Second-harmonic Hall resistivity.
  • Fig. S10. Temperature dependence of resistivity of the GeTe/Sb2Te3 thin film.
  • Fig. S11. Magnetization measurement for 74- and 192-nm-thick samples.
  • Table S1. Physical parameters for the effective band model of (Ge,Mn)Te.
  • Table S2. Current ratio for all samples.
  • References (3941)

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