Science Advances

Supplementary Materials

This PDF file includes:

  • Fig. S1. Rietveld refinement of N□xASO and N□xASO:Eu.
  • Fig. S2. Rietveld refinement of N□ASO:yLi, Eu.
  • Fig. S3. 27Al and 29Si NMR of N□ASO:yLi, Eu and N□xASO.
  • Fig. S4. Thermal quenching behavior of YAG:Ce and N□ASO:yLi, Eu.
  • Fig. S5. The CT transition energies of Eu3+ and the band gap calculation of the N□ASO:yLi host.
  • Table S1. Main parameters of processing and refinement of the N□xASO (0 ≤ x ≤ 0.25) and N□xASO:Eu (0 ≤ x ≤ 0.25) samples.
  • Table S2. Main parameters of processing and refinement of the N□ASO:yLi, Eu (0 ≤ y ≤ 0.15) samples.
  • Table S3. Fractional atomic coordinates and isotropic displacement parameters (Å2) of the N□ASO:yLi, Eu (0 ≤ y ≤ 0.15) samples.
  • Table S4. The photoelectric properties of WLEDs fabricated using yellow-emitting N□ASO:Eu phosphor, blue-emitting commercial BAM:Eu2+, and red-emitting commercial KSF:Mn4+ phosphor with a near-UV LED chip (λ = 365 nm) excitation under various drive currents.
  • Table S5. Photoelectric properties of WLEDs fabricated using green-emitting N□ASO:0.15Li, Eu phosphor, blue-emitting commercial BAM:Eu2+, and red-emitting commercial KSF:Mn4+ phosphor with a near-UV LED chip (λ = 365 nm) excitation under various drive currents.

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