Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. Device fabrication
  • Section S2. HR STEM of heterostructure devices
  • Section S3. Atomic force microscopy
  • Section S4. Conductive AFM
  • Section S5. Hysteresis of graphene and MoS2 FETs
  • Section S6. Further examples of ReRAM elements with titanium adhesion layer
  • Section S7. Additional optoelectronic device data
  • Fig. S1. Heterostructure processing route.
  • Fig. S2. Additional TEM data.
  • Fig. S3. AFM data.
  • Fig. S4. Comparison of surface roughness of graphene on hBN and on HfS2.
  • Fig. S5. CAFM on HfOx.
  • Fig. S6. Hysteresis behavior of graphene and MoS2 FETs in different dielectric environments.
  • Fig. S7. Comparison of hysteresis width (ΔVH) as a function of sweep rate for the hBN-MoS2-HfOx and SiO2-MoS2-HfOx devices.
  • Fig. S8. Additional ReRAM devices.
  • Fig. S9. Temperature dependence of the resistance for a graphite-HfOx-Cr/Au vertical structure with t < 3 nm tunnel barriers.
  • Fig. S10. Additional optoelectronic characterization.
  • References (60, 61)

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