Science Advances

This PDF file includes:

• Fig. S1. Fabrication process and IGT architecture.
• Fig. S2. PEDOT:PSS reduces the chitosan-Au electrochemical impedance at the IGT gate.
• Fig. S3. Comparison of electrochemical impedance of different material interfaces.
• Fig. S4. Comparison of ion species and ion membrane material on modulation magnitude and rise time of IGTs.
• Fig. S5. Internal mobile ions enable stable operation over time without a decrement in speed or significant drift in drain current.
• Fig. S6. Effect of channel geometry on IGT I_on/I_off.
• Fig. S7. Output characteristics of IGT and OECT devices with identical geometry.
• Fig. S8. Output characteristics of IGT and SS-OECT devices with identical geometry.

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