Science Advances

Supplementary Materials

This PDF file includes:

  • Fig. S1. Fabrication process and IGT architecture.
  • Fig. S2. PEDOT:PSS reduces the chitosan-Au electrochemical impedance at the IGT gate.
  • Fig. S3. Comparison of electrochemical impedance of different material interfaces.
  • Fig. S4. Comparison of ion species and ion membrane material on modulation magnitude and rise time of IGTs.
  • Fig. S5. Internal mobile ions enable stable operation over time without a decrement in speed or significant drift in drain current.
  • Fig. S6. Effect of channel geometry on IGT Ion/Ioff.
  • Fig. S7. Output characteristics of IGT and OECT devices with identical geometry.
  • Fig. S8. Output characteristics of IGT and SS-OECT devices with identical geometry.

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