Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. Optical and electrical characterizations
  • Section S2. Details of resistor network for ohmic contribution
  • Section S3. Derivation of nonlocal resistance, Rnl
  • Section S4. Additional nonlocal measurements for multilayer MoS2 devices
  • Section S5. Additional nonlocal measurements from other monolayer MoS2 devices
  • Section S6. Channel length and width dependence in monolayer MoS2 device
  • Section S7. Detailed θ calculation and its temperature trend
  • Section S8. Detailed λ calculation and its temperature trend
  • Section S9. Nonlocal internal resistance measurements
  • Section S10. Applied in-plane magnetic field
  • Fig. S1. Device layer number confirmations.
  • Fig. S2. Device electrical characterizations.
  • Fig. S3. SPICE-based resistor network.
  • Fig. S4. The lumped valley-circuit model that is used to derive Eq. 1.
  • Fig. S5. Comparison of analytical equations for Rnl with the full SPICE simulation of the circuit shown in fig. S4.
  • Fig. S6. Long-channel multilayer MoS2 devices and additional monolayer MoS2 device measurements.
  • Fig. S7. Length dependence in monolayer MoS2.
  • Fig. S8. Valley Hall angle and intervalley scattering length.
  • Fig. S9. Extraction of internal resistance in the nonlocal electrode.
  • Fig. S10. Vnl measurements with in-plane magnetic field applied.
  • References (3641)

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