Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. Geometrical parameters of etched patterns and continuum elasticity analysis
  • Section S2. Additional structural, optical characterizations, and MD simulation for asymmetric strain distribution
  • Section S3. Detailed analysis for the simulations of multiple domain growth
  • Fig. S1. Geometrical parameters for photolithographically patterned trenches and donuts.
  • Fig. S2. Strain profile analysis for an ML MoS2 crystal conforming to an individual donut as examined by a continuum elasticity model.
  • Fig. S3. Estimation of the intrinsic global strain in ML WS2 crystals grown on SiO2/Si substrates.
  • Fig. S4. Optical characterization of ML WS2 crystals grown on 20-nm parallel trenches.
  • Fig. S5. Strain release and feature disappearance after detaching the ML from the 20-nm donut patterns.
  • Fig. S6. Description for the MD simulations and asymmetrical strain profile analysis by MD simulations by mimicking the growth process.
  • Fig. S7. Raman and SHG analysis for the crystals grown on 40-nm donuts.
  • Fig. S8. Morphologies of WS2 flakes grown directly on 60- and 180-nm donuts.
  • Fig. S9. Phase-field simulation for multigrain-like shapes with different misorientation angles.
  • Fig. S10. First-principles density functional theory calculations.
  • Table S1. List of parameters used for the phase-field simulation.
  • References (3537)

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