Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. Additional results on the material characterizations
  • Section S2. Additional results on the electrical and photocurrent measurements
  • Section S3. Band diagram of the graphene-MoS2 lateral heterojunction
  • Section S4. Electron-phonon coupling strength in graphene and MoS2
  • Section S5. Theoretical analysis of the electron temperature distributions
  • Fig. S1. Atomic force microscope (AFM) image of the graphene-MoS2 lateral heterojunction.
  • Fig. S2. HRTEM images of the graphene-MoS2 lateral heterostructure.
  • Fig. S3. Raman and PL of the graphene-MoS2 lateral heterojunction.
  • Fig. S4. Output characteristics.
  • Fig. S5. I-V characteristics with 633-nm light illumination and various gate voltages.
  • Fig. S6. Gate-dependent photocurrent response at the graphene-metal and MoS2-metal junctions.
  • Fig. S7. Power-dependent and temperature-dependent photocurrent response.
  • Fig. S8. Photocurrent peak position shift extracted from the Vg-X mappings with 850-nm laser excitation and at various temperatures.
  • Fig. S9. SPCM mappings of the graphene-MoS2 junction with different excitation wavelengths.
  • Fig. S10. Band diagram of the graphene-MoS2 lateral heterojunction.
  • Fig. S11. Schematics showing two different hot-electron cooling pathways.
  • Fig. S12. Extraction of graphene properties.
  • Fig. S13. Calculated physical parameters for graphene with different Δ values.
  • Fig. S14. Calculated physical parameters for graphene with different σmin values.
  • Fig. S15. Simulated electron temperature distributions with different Fermi level of graphene.
  • References (44, 45)

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