Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. Ohmic contacts
  • Section S2. Dimensions of all FGT/graphite/FGT devices
  • Section S3. Transmission electron microscopy (TEM) on the heterostructures
  • Section S4. The effect of graphite layer etch and samples with weak interlayer coupling
  • Section S5. Fabrication of a symmetric Hall bar device based on FIB milling
  • Section S6. Transport measurement for other samples
  • Section S7. Tentative resistor model
  • Section S8. Band structure calculation
  • Section S9. Discussion about the angle-dependent results in Fig. 3
  • Fig. S1. Ohmic contact confirmation.
  • Fig. S2. TEM on FGT/graphite/FGT heterostructure.
  • Fig. S3. The effect of graphite layer etch and samples with weak interlayer coupling.
  • Fig. S4. Rxx and Rxy of an FIB-etched FGT/graphite/FGT device at 50 K.
  • Fig. S5. Measurements for FPC1 and FPC9.
  • Fig. S6. Measurement for an asymmetric sample FPC2 (the anomalous Hall signal is large).
  • Fig. S7. Angle-dependent curves at 50 K for sample FPC11, with top and bottom FGT touching each other.
  • Fig. S8. Rxx(B) and Rxy (B) curves for two samples with relatively larger ΔRxx/Rxx value at 50 K.
  • Fig. S9. Tentative resistor model.
  • Fig. S10. Surface states and surface spin texture of FGT.
  • Table S1. Dimensions of all FGT/graphite/FGT devices.

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