Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. Device characterization and measurement setup
  • Section S2. Gain of the amplification chain
  • Section S3. Electron temperature (T0) determination
  • Section S4. Partition of current and contact resistance
  • Section S5. Dissipated power in the floating reservoir
  • Section S6. Determination of the temperature (TM) of floating reservoir
  • Section S7. Extended excess thermal noise data
  • Section S8. Heat loss by electron-phonon cooling
  • Section S9. Accuracy of the thermal conductance measurement
  • Section S10. Discussion on heat Coulomb blockade
  • Fig. S1. Optical image and device response at zero magnetic field.
  • Fig. S2. Experimental setup for noise measurement.
  • Fig. S3. Schematic used to derive the gain in section S2.
  • Fig. S4. Gain of amplification chain: Output voltage from a known input signal in QH state at resonance frequency.
  • Fig. S5. Gain of amplification chain: From the temperature-dependent thermal noise.
  • Fig. S6. Gain of amplification chain during measurement of device 3 (graphite back-gated device).
  • Fig. S7. RC filter assembly and thermal anchoring on the cold finger.
  • Fig. S8. Electron temperature (T0) determination.
  • Fig. S9. Electron temperature (T0) determination: From shot noise measurement in a p-n junction of graphene device.
  • Fig. S10. Equipartition of current in left and right moving chiral states.
  • Fig. S11. Determination of contact resistance and source noise.
  • Fig. S12. Extended excess thermal noise raw data.
  • Fig. S13. Extended data of device 1 at B = 6 T.
  • Fig. S14. Extended data of device 2 at B = 6 T.
  • Fig. S15. Extended data of device 3 (graphite back gate) at B = 7 T.
  • Fig. S16. Extended data of device 3 (graphite back gate) at B = 7 T.
  • Fig. S17. Heat loss by electron-phonon coupling.
  • Table S1. Gain of amplification chain.
  • Table S2. Electron temperature (T0).
  • Table S3. Contact resistance and the source noise.
  • Table S4. Contact resistance and the source noise of device 3 (graphite back-gated device).
  • Table S5. Change in thermal conductance for different electron temperature T0.
  • References (4355)

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