Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. Atomic force microscopy measurement of monolayer ReSe2
  • Section S2. Moiré pattern of single-layer ReSe2 on graphene
  • Section S2.1. Moiré patterns for various twist angles
  • Section S2.2. A comparison between experimental and theoretical moiré patterns
  • Section S3. Gate-dependent dI/dV spectra of a different ReSe2/graphene device
  • Section S4. Probe the defects in monolayer ReSe2
  • Section S5. Band structure of monolayer ReSe2
  • Section S6. Differential reflectance spectrum and gate-dependent photoluminescence spectra of monolayer ReSe2
  • Section S7. Gate-dependent dI/dV spectra of graphene/monolayer ReSe2
  • Section S8. Calculation of Eb in monolayer ReSe2 as a function of the carrier density in graphene substrate
  • Section S9. Charge transfer at the interface of ReSe2/graphene
  • Fig. S1. Identify the thickness of monolayer ReSe2.
  • Fig. S2. Moiré lengths of ReSe2/graphene as a function of twist angle.
  • Fig. S3. Gate-dependent dI/dV spectra of a different device.
  • Fig. S4. STM images and STS measurements of defects in ReSe2.
  • Fig. S5. Band structure of monolayer ReSe2 calculated using the first-principle density functional theory calculations with the Perdew-Burke-Ernzerhof exchange-correlation functional using the QUANTUM ESPRESSO code.
  • Fig. S6. Differential reflectance spectrum and gate-dependent photoluminescence spectra of monolayer ReSe2 on graphene/h-BN.
  • Fig. S7. Gate-dependent dI/dV spectra of graphene/monolayer ReSe2.
  • Fig. S8. Exciton binding energy (Eb) and Thomas-Fermi screening radius (rs) as a function of electron concentration (n) in graphene.
  • Fig. S9. Charge transfer at ReSe2/graphene interface.
  • Table S1. Geometrical properties of the moiré patterns of ReSe2/graphene.
  • References (3746)

Download PDF

Files in this Data Supplement: