Science Advances

This PDF file includes:

• Finite-element analysis
• Characteristics of the FETs
• Calculation of the β and α values of the IZO temperature sensor
• Gauge factor calculation of the IZO strain sensor
• Fig. S1. Ultrathin imperceptible multifunctional HMI device.
• Fig. S2. Schematic illustration of the sol-gel-on-polymer–processed IZO nanomembrane–based multifunctional ultrathin stretchable and imperceptible HMI devices.
• Fig. S3. Transferring the ultrathin imperceptible HMI device onto the human forearm.
• Fig. S4. Strategy of enhanced stability for the ultrathin imperceptible HMI device on a human forearm.
• Fig. S5. Characteristics of the IZO nanomembrane.
• Fig. S6. IZO nanomembrane–based ReRAM.
• Fig. S7. Schematic illustration of the working mechanism of the IZO nanomembrane–based ReRAM.
• Fig. S8. Electrical characteristics of the IZO nanomembrane–based ReRAM.
• Fig. S9. Sequential images of the IZO ReRAM under stretching and corresponding FEA results of the electrode.
• Fig. S10. Electrical characteristics of the IZO ReRAM under mechanical stretching.
• Fig. S11. IZO nanomembrane–based FET.
• Fig. S12. Dynamic response of the IZO FETs.
• Fig. S13. Sequential images of the IZO FETs under mechanical stretching and corresponding FEA results of the gate dielectric, SU-8.
• Fig. S14. Sequential images of the IZO FETs under mechanical stretching and corresponding FEA results of the electrode.
• Fig. S15. Electrical characteristics of the IZO FETs under mechanical stretching.
• Fig. S16. Cyclic ON/OFF reliability and stability of the IZO FETs.
• Fig. S17. Transfer characteristics of IZO FETs as fabricated and after 2 years.
• Fig. S18. IZO nanomembrane–based UV sensor.
• Fig. S19. I-V characteristics of the IZO UV sensor under different intensities of UV light.
• Fig. S20. Sequential images of the IZO UV sensor under mechanical stretching and corresponding FEA results of the electrode.
• Fig. S21. Electrical characteristics of the IZO UV sensor under mechanical stretching.
• Fig. S22. IZO nanomembrane–based temperature sensor.
• Fig. S23. Electrical characteristics of the IZO temperature sensor.
• Fig. S24. Sequential images of the IZO temperature sensor under mechanical stretching and corresponding FEA results of the electrode.
• Fig. S25. Electrical characteristics of the IZO temperature sensor under mechanical stretching.
• Fig. S26. IZO nanomembrane–based strain sensor.
• Fig. S27. Resistance change of the serpentine electrode under mechanical stretching.
• Fig. S28. Sequential images of the IZO strain sensor under mechanical stretching and corresponding FEA results of the electrode.
• Fig. S29. FEA results of the IZO strain sensor for strain distribution on Au electrode and IZO under mechanical strain of 30% at different strain rates.
• Fig. S30. Schematic illustration of a closed-loop HMI.
• Table S1. Summary of the response time parameters extracted from fig. S11.
• Table S2. Summary of the strain ratio (electrode/semiconductor) at different strain rates.
• References (43–46)

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