Science Advances

Supplementary Materials

This PDF file includes:

  • Finite-element analysis
  • Characteristics of the FETs
  • Calculation of the β and α values of the IZO temperature sensor
  • Gauge factor calculation of the IZO strain sensor
  • Fig. S1. Ultrathin imperceptible multifunctional HMI device.
  • Fig. S2. Schematic illustration of the sol-gel-on-polymer–processed IZO nanomembrane–based multifunctional ultrathin stretchable and imperceptible HMI devices.
  • Fig. S3. Transferring the ultrathin imperceptible HMI device onto the human forearm.
  • Fig. S4. Strategy of enhanced stability for the ultrathin imperceptible HMI device on a human forearm.
  • Fig. S5. Characteristics of the IZO nanomembrane.
  • Fig. S6. IZO nanomembrane–based ReRAM.
  • Fig. S7. Schematic illustration of the working mechanism of the IZO nanomembrane–based ReRAM.
  • Fig. S8. Electrical characteristics of the IZO nanomembrane–based ReRAM.
  • Fig. S9. Sequential images of the IZO ReRAM under stretching and corresponding FEA results of the electrode.
  • Fig. S10. Electrical characteristics of the IZO ReRAM under mechanical stretching.
  • Fig. S11. IZO nanomembrane–based FET.
  • Fig. S12. Dynamic response of the IZO FETs.
  • Fig. S13. Sequential images of the IZO FETs under mechanical stretching and corresponding FEA results of the gate dielectric, SU-8.
  • Fig. S14. Sequential images of the IZO FETs under mechanical stretching and corresponding FEA results of the electrode.
  • Fig. S15. Electrical characteristics of the IZO FETs under mechanical stretching.
  • Fig. S16. Cyclic ON/OFF reliability and stability of the IZO FETs.
  • Fig. S17. Transfer characteristics of IZO FETs as fabricated and after 2 years.
  • Fig. S18. IZO nanomembrane–based UV sensor.
  • Fig. S19. I-V characteristics of the IZO UV sensor under different intensities of UV light.
  • Fig. S20. Sequential images of the IZO UV sensor under mechanical stretching and corresponding FEA results of the electrode.
  • Fig. S21. Electrical characteristics of the IZO UV sensor under mechanical stretching.
  • Fig. S22. IZO nanomembrane–based temperature sensor.
  • Fig. S23. Electrical characteristics of the IZO temperature sensor.
  • Fig. S24. Sequential images of the IZO temperature sensor under mechanical stretching and corresponding FEA results of the electrode.
  • Fig. S25. Electrical characteristics of the IZO temperature sensor under mechanical stretching.
  • Fig. S26. IZO nanomembrane–based strain sensor.
  • Fig. S27. Resistance change of the serpentine electrode under mechanical stretching.
  • Fig. S28. Sequential images of the IZO strain sensor under mechanical stretching and corresponding FEA results of the electrode.
  • Fig. S29. FEA results of the IZO strain sensor for strain distribution on Au electrode and IZO under mechanical strain of 30% at different strain rates.
  • Fig. S30. Schematic illustration of a closed-loop HMI.
  • Table S1. Summary of the response time parameters extracted from fig. S11.
  • Table S2. Summary of the strain ratio (electrode/semiconductor) at different strain rates.
  • References (43–46)

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