Science Advances

Supplementary Materials

The PDF file includes:

  • Supplementary Method
  • Fig. S1. Procedure for the growth of Nc-G films.
  • Fig. S2. The continuous nucleation of nitrogen-doped graphene.
  • Fig. S3. The effect of the oxygen-assisted etching-regrowth cycle on suppression of nucleation.
  • Fig. S4. Structural characterization of as-grown large Nc-G single crystals.
  • Fig. S5. Raman characterizations of Nc-G grains.
  • Fig. S6. The isotopic labeling experiment to visualize the growth kinetics of millimeter-sized Nc-G grains.
  • Fig. S7. The reported nμ and σ values function as μ in Nc-G of this work (red) and previous CVD doping strategies (navy blue).
  • Fig. S8. STM images of the clustered nitrogen dopants in graphene lattice.
  • Fig. S9. The STM and STS characterization of single-substitutional nitrogen-doped graphene.
  • Fig. S10. Calculated dissociation energy of C-C-N.
  • Fig. S11. STS measurements of Nc-G films.
  • Fig. S12. N atoms prefer to stay on the edge of a C-N cluster.
  • Fig. S13. C-N clusters without N atoms at the center are more stable.
  • Fig. S14. C-N cluster with flat structure is more stable.
  • Fig. S15. C-N cluster with high ratio of N atoms at the edge is more stable.
  • Fig. S16. A series of triangular shaped C-N clusters with N edges have very low formation energies.
  • Fig. S17. The doping efficiency of Nc-G film.
  • Fig. S18. The large-scale conductivity and transmittance of Nc-G films.
  • Fig. S19. Potential application of Nc-G films.
  • Fig. S20. High electrostatic potential and quasi-bound states induced by nitrogen clusters.
  • Legend for movie S1
  • Table S1. Mobilities and sheet resistance of previously reported intrinsic graphene.
  • Table S2. Mobilities, conductivity, and stability of previously reported doped graphene.
  • References (4562)

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Other Supplementary Material for this manuscript includes the following:

  • Movie S1 (.mp4 format). Demonstration of a flexible touch screen device made from Nc-G film.

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