Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. RHEED oscillations of 4 unit cells (uc) of SAO/STO (001)
  • Section S2. Electrical transport properties of 4-nm a-SAO/STO and 4-nm a-LAO/STO
  • Section S3. Microscopy images of 20-nm a-SAO/STO (001) before and after dissolving into the DI water
  • Section S4. Microscopy images of 20-nm a-SAO/STO sample with different tair
  • Section S5. Electrical transport properties of 4-nm a-SAO/STO with different tair
  • Section S6. tair dependence of RS for 50-nm a-SAO/STO (001) and 10-nm a-STO–capped 4-nm a-SAO/STO
  • Section S7. Nonlinear to linear Hall effect of 4-nm a-SAO/STO heterointerface with different tair
  • Section S8. Magnetoresistance of 4-nm a-SAO/STO with different tair
  • Section S9. Growth oxygen partial pressure dependence of RS
  • Section S10. AFM images of reusable STO surface topography
  • Section S11. Discussion of the possible chemical reactions to dissolve a-SAO and remove oxygen vacancies at STO surface by water
  • Fig. S1. RHEED oscillations of 4 uc of single-crystalline SAO grown on STO (001).
  • Fig. S2. Electrical transport properties of 4-nm a-SAO/STO and 4-nm a-LAO/STO.
  • Fig. S3. Microscopy images of 20-nm a-SAO/STO (001) with Hall bar pattern.
  • Fig. S4. Microscopy images of the surface of 20-nm a-SAO/STO sample with different tair.
  • Fig. S5. Electrical transport properties of 4-nm a-SAO/STO with different tair.
  • Fig. S6. tair dependence of RS.
  • Fig. S7. Nonlinear to linear Hall effect of 4-nm a-SAO/STO heterointerface.
  • Fig. S8. Magnetoresistance of 4-nm a-SAO/STO at 2.5 K with different tair.
  • Fig. S9. Growth oxygen partial pressure dependence of RS at 300 K.
  • Fig. S10. AFM images of reusable STO surface topography.

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