Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. Anti-weak localization
  • Section S2. T dependence of SOT
  • Section S3. Micromagnetic simulations of SOT-induced magnetization switching
  • Section S4. Estimation of SOT strength
  • Section S5. Estimation of fermi level and carrier density
  • Section S6. Cross-section image of Bi2Se3/BaFe12O19
  • Fig. S1. Dependence of the conductivity of the Bi2Se3 film on a magnetic field applied along the film normal direction.
  • Fig. S2. Simulated results on SOT-induced switching at T = 0 K and T = 300 K.
  • Fig. S3. Simulated results on SOT-assisted field switching under the configuration are the same as that for Fig. 4 in the main text.
  • Fig. S4. Estimation of strength of SOC and SOT in Bi2Se3/BaFe12O19.
  • Fig. S5. Calculated EF and carrier densities.
  • Fig. S6. High-resolution transmission electron microscopy image of the Bi2Se3/BaFe12O19 stack with Te capping layer.
  • References (39, 40)

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