Science Advances

Supplementary Materials

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  • Fig. S1. Atomic force microscopy images of the nanowires before deposition of Al contact electrodes.
  • Fig. S2. SEM image of a device similar to the one measured but before depositing the top gate electrodes.
  • Fig. S3. Differential conductance (G) properties of the Al-InAs DNW-Al junction device.
  • Fig. S4. Differential conductance G against Vsd measured at B = 0 T for a bias point on the respective plateau of (m, n).
  • Fig. S5. Gate bias points set for supercurrent measurement at B = 0 T indicated on the surface plot of G against Vg1 and Vg2 at B = 250 mT.
  • Fig. S6. Magnetic field dependence of Isw(m, n) and Isw(m, 0) + Isw(0, n) measured at various quantized conductance plateaus with m and n.
  • Fig. S7. Isw(m, 0) + Isw(0, n) against G(m, 0) + G(0, n) measured at B = 80 mT and B = 120 mT.
  • Fig. S8. Isw(2,2) as a function of temperature.
  • Note S1. Details of fabrication process for the DNW Josephson junctions
  • Note S2. Magnetic field dependence of the superconducting gap
  • Note S3. Multiple Andreev reflection and quantized conductance outside the superconducting gap
  • Note S4. Measurement points for supercurrent
  • Note S5. Magnetic field dependence of CPS and LPT
  • Note S6. Another possible mechanism for the Isw enhancement
  • Note S7. Joule heating
  • References (4350)

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