Science Advances

Supplementary Materials

This PDF file includes:

  • Text S1. Simulation for photon confinement in the vertical direction
  • Text S2. Nanohole patterned Ti mask substrate for selective area epitaxy
  • Text S3. Epitaxial growth of InGaN/AlGaN core-shell heterostructures
  • Text S4. TEM specimen preparation using a focused ion beam system
  • Text S5. Ga-polar n-GaN nanocrystal structure
  • Text S6. Projection effect image and quasi-3D structure of InGaN/AlGaN quantum disk layers
  • Text S7. Properties of semipolar InGaN/AlGaN core-shell heterostructures
  • Text S8. NCSEL device fabrication
  • Text S9. Electroluminescence measurement
  • Text S10. Calculation of far-field radiation pattern
  • Text S11. Measurement of far-field radiation pattern
  • Text S12. Polarization measurement of the light emission of InGaN NCSELs
  • Fig. S1. Variation of the effective refractive index along the growth direction and the TM polarized mode intensity profile.
  • Fig. S2. Schematic illustration and field-emission SEM image of the patterned Ti thin-film nanohole mask fabricated on n-type GaN template substrate.
  • Fig. S3. TEM lamella preparation of the nanocrystal.
  • Fig. S4. Ga-polar n-GaN nanocrystal structure.
  • Fig. S5. Projection effect in quasi-3D structure.
  • Fig. S6. PL emission spectra of InGaN/AlGaN core-shell multiquantum disk nanocrystals (green curve) and InGaN/GaN multiquantum disk nanocrystals without AlGaN shell (blue curve) measured at 300 K.
  • Fig. S7. Schematic illustration of the full device fabrication, including passivation, planarization, photolithography, and contact metallization techniques.
  • Fig. S8. Schematic illustration of the measurement setup for electroluminescence spectra.
  • Fig. S9. Schematic illustration of the far-field measurement setup with a CCD camera at a distance above the NCSEL device.
  • Fig. S10. Schematic illustration of the polarization angle measurement.
  • References (6983)

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