Science Advances

Supplementary Materials

This PDF file includes:

  • Fig. S1. Polarization-resolved Raman scattering spectra of BP with a thickness of 10.5 nm.
  • Fig. S2. The tunable PL spectra of the 20-layer BP device under different displacement fields from 0 to −0.48 V/nm.
  • Fig. S3. The band structure of the 20-layer BP at the displacement fields of 0.06, 0.12, 0.24, and 0.36 V/nm in comparison with the intrinsic BP.
  • Fig. S4. The wave functions of electrons and holes at the bottom of the conduction band and on top of the valence band at the Γ point in 20-layer BP under bias fields of 0.12, 0.24, and 0.48 V/nm.
  • Fig. S5. Angular-resolved PL intensity of the 20-layer BP device at different displacement fields.
  • Fig. S6. Calculated anisotropic optical conductivity.
  • Note S1. Gate-tunable BP band structure with the tight-binding model
  • Note S2. Estimation of the oscillator strength under bias
  • Reference (64)

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