Science Advances

Supplementary Materials

This PDF file includes:

  • Section S1. S-σ relations expected for conventional semiconductors and metals
  • Section S2. Effects of high Vg on the transport and thermoelectric properties
  • Section S3. In situ GIXD measurements during the application of Vg
  • Section S4. AFM imaging of the PBTTT thin film
  • Section S5. Anisotropy of the ESR parameters
  • Section S6. DFT calculation of backbone rigidity in the neutral and cationic states
  • Fig. S1. Thermoelectric properties of the electrolyte-gated PBTTT thin films.
  • Fig. S2. In situ GIXD measurements of electrolyte-gated PBTTT thin films.
  • Fig. S3. AFM imaging of the PBTTT thin film.
  • Fig. S4. Angular dependence of the ESR parameters at various doping levels.
  • Fig. S5. DFT calculation of the torsion potential.
  • References (4959)

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