RT Journal Article
SR Electronic
T1 Understanding charge transport in lead iodide perovskite thin-film field-effect transistors
JF Science Advances
JO Sci Adv
FD American Association for the Advancement of Science
SP e1601935
DO 10.1126/sciadv.1601935
VO 3
IS 1
A1 Senanayak, Satyaprasad P.
A1 Yang, Bingyan
A1 Thomas, Tudor H.
A1 Giesbrecht, Nadja
A1 Huang, Wenchao
A1 Gann, Eliot
A1 Nair, Bhaskaran
A1 Goedel, Karl
A1 Guha, Suchi
A1 Moya, Xavier
A1 McNeill, Christopher R.
A1 Docampo, Pablo
A1 Sadhanala, Aditya
A1 Friend, Richard H.
A1 Sirringhaus, Henning
YR 2017
UL http://advances.sciencemag.org/content/3/1/e1601935.abstract
AB Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI3). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μFET) of 0.5 cm2/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA+ cations, and thermal vibrations of the lead halide inorganic cages.