RT Journal Article
SR Electronic
T1 Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus
JF Science Advances
JO Sci Adv
FD American Association for the Advancement of Science
SP e1700589
DO 10.1126/sciadv.1700589
VO 3
IS 6
A1 Long, Mingsheng
A1 Gao, Anyuan
A1 Wang, Peng
A1 Xia, Hui
A1 Ott, Claudia
A1 Pan, Chen
A1 Fu, Yajun
A1 Liu, Erfu
A1 Chen, Xiaoshuang
A1 Lu, Wei
A1 Nilges, Tom
A1 Xu, Jianbin
A1 Wang, Xiaomu
A1 Hu, Weida
A1 Miao, Feng
YR 2017
UL http://advances.sciencemag.org/content/3/6/e1700589.abstract
AB The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular “fingerprint” imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost photodetectors requiring cryogenic operation. We report black arsenic phosphorus–based long-wavelength IR photodetectors, with room temperature operation up to 8.2 μm, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature–specific detectivity higher than 4.9 × 109 Jones was obtained in the 3- to 5-μm range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodetectors not only exemplify black arsenic phosphorus as a promising candidate for MIR optoelectronic applications but also pave the way for a general strategy to suppress 1/f noise in photonic devices.