RT Journal Article
SR Electronic
T1 Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
JF Science Advances
JO Sci Adv
FD American Association for the Advancement of Science
SP e1701661
DO 10.1126/sciadv.1701661
VO 3
IS 10
A1 Park, Jun Hong
A1 Sanne, Atresh
A1 Guo, Yuzheng
A1 Amani, Matin
A1 Zhang, Kehao
A1 Movva, Hema C. P.
A1 Robinson, Joshua A.
A1 Javey, Ali
A1 Robertson, John
A1 Banerjee, Sanjay K.
A1 Kummel, Andrew C.
YR 2017
UL http://advances.sciencemag.org/content/3/10/e1701661.abstract
AB Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS2 is investigated as a defect passivation method. A strong negative charge transfer from MoS2 to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the ION/IOFF in back-gated MoS2 transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS2. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex.