RT Journal Article
SR Electronic
T1 Current-driven magnetization switching in a van der Waals ferromagnet Fe<sub>3</sub>GeTe<sub>2</sub>
JF Science Advances
JO Sci Adv
FD American Association for the Advancement of Science
SP eaaw8904
DO 10.1126/sciadv.aaw8904
VO 5
IS 8
A1 Wang, Xiao
A1 Tang, Jian
A1 Xia, Xiuxin
A1 He, Congli
A1 Zhang, Junwei
A1 Liu, Yizhou
A1 Wan, Caihua
A1 Fang, Chi
A1 Guo, Chenyang
A1 Yang, Wenlong
A1 Guang, Yao
A1 Zhang, Xiaomin
A1 Xu, Hongjun
A1 Wei, Jinwu
A1 Liao, Mengzhou
A1 Lu, Xiaobo
A1 Feng, Jiafeng
A1 Li, Xiaoxi
A1 Peng, Yong
A1 Wei, Hongxiang
A1 Yang, Rong
A1 Shi, Dongxia
A1 Zhang, Xixiang
A1 Han, Zheng
A1 Zhang, Zhidong
A1 Zhang, Guangyu
A1 Yu, Guoqiang
A1 Han, Xiufeng
YR 2019
UL http://advances.sciencemag.org/content/5/8/eaaw8904.abstract
AB The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for spintronic devices with exceptional properties. However, to use 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of Fe3GeTe2/Pt, in which the magnetization of few-layered Fe3GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications.