RT Journal Article SR Electronic T1 Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2 JF Science Advances JO Sci Adv FD American Association for the Advancement of Science SP eaaw8904 DO 10.1126/sciadv.aaw8904 VO 5 IS 8 A1 Wang, Xiao A1 Tang, Jian A1 Xia, Xiuxin A1 He, Congli A1 Zhang, Junwei A1 Liu, Yizhou A1 Wan, Caihua A1 Fang, Chi A1 Guo, Chenyang A1 Yang, Wenlong A1 Guang, Yao A1 Zhang, Xiaomin A1 Xu, Hongjun A1 Wei, Jinwu A1 Liao, Mengzhou A1 Lu, Xiaobo A1 Feng, Jiafeng A1 Li, Xiaoxi A1 Peng, Yong A1 Wei, Hongxiang A1 Yang, Rong A1 Shi, Dongxia A1 Zhang, Xixiang A1 Han, Zheng A1 Zhang, Zhidong A1 Zhang, Guangyu A1 Yu, Guoqiang A1 Han, Xiufeng YR 2019 UL http://advances.sciencemag.org/content/5/8/eaaw8904.abstract AB The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for spintronic devices with exceptional properties. However, to use 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of Fe3GeTe2/Pt, in which the magnetization of few-layered Fe3GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications.