RT Journal Article
SR Electronic
T1 An electrically pumped surface-emitting semiconductor green laser
JF Science Advances
JO Sci Adv
FD American Association for the Advancement of Science
SP eaav7523
DO 10.1126/sciadv.aav7523
VO 6
IS 1
A1 Ra, Yong-Ho
A1 Rashid, Roksana Tonny
A1 Liu, Xianhe
A1 Sadaf, Sharif Md.
A1 Mashooq, Kishwar
A1 Mi, Zetian
YR 2020
UL http://advances.sciencemag.org/content/6/1/eaav7523.abstract
AB Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)–free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold current of ~400 A/cm2, which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (~200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.