RT Journal Article
SR Electronic
T1 Breath figure–derived porous semiconducting films for organic electronics
JF Science Advances
JO Sci Adv
FD American Association for the Advancement of Science
SP eaaz1042
DO 10.1126/sciadv.aaz1042
VO 6
IS 13
A1 Zhang, Xinan
A1 Wang, Binghao
A1 Huang, Lizhen
A1 Huang, Wei
A1 Wang, Zhi
A1 Zhu, Weigang
A1 Chen, Yao
A1 Mao, YanLi
A1 Facchetti, Antonio
A1 Marks, Tobin J.
YR 2020
UL http://advances.sciencemag.org/content/6/13/eaaz1042.abstract
AB Porous semiconductor film morphologies facilitate fluid diffusion and mass transport into the charge-carrying layers of diverse electronic devices. Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. Detailed morphological analysis of these films demonstrates formation of textured layers with uniform nanopores reaching the bottom substrate with an unchanged solid-state packing structure. Device data gathered with both porous and dense control semiconductor films demonstrate that the former films are efficient TFT semiconductors but with added advantage of enhanced sensitivity to gases (e.g., 48.2%/ppm for NO2 using P3HT/PS), faster switching speeds (4.7 s for P3HT/PS OECTs), and more efficient molecular doping (conductivity, 0.13 S/m for N2200/PS).