PT - JOURNAL ARTICLE AU - Lübben, M. AU - Cüppers, F. AU - Mohr, J. AU - von Witzleben, M. AU - Breuer, U. AU - Waser, R. AU - Neumann, C. AU - Valov, I. TI - Design of defect-chemical properties and device performance in memristive systems AID - 10.1126/sciadv.aaz9079 DP - 2020 May 01 TA - Science Advances PG - eaaz9079 VI - 6 IP - 19 4099 - http://advances.sciencemag.org/content/6/19/eaaz9079.short 4100 - http://advances.sciencemag.org/content/6/19/eaaz9079.full SO - Sci Adv2020 May 01; 6 AB - Future development of the modern nanoelectronics and its flagships internet of things, artificial intelligence, and neuromorphic computing is largely associated with memristive elements, offering a spectrum of inevitable functionalities, atomic level scalability, and low-power operation. However, their development is limited by significant variability and still phenomenologically orientated materials’ design strategy. Here, we highlight the vital importance of materials’ purity, demonstrating that even parts-per-million foreign elements substantially change performance. Appropriate choice of chemistry and amount of doping element selectively enhances the desired functionality. Dopant/impurity-dependent structure and charge/potential distribution in the space-charge layers and cell capacitance determine the device kinetics and functions. The relation between chemical composition/purity and switching/neuromorphic performance is experimentally evidenced, providing directions for a rational design of future memristive devices.