PT  - JOURNAL ARTICLE
AU  - Lübben, M.
AU  - Cüppers, F.
AU  - Mohr, J.
AU  - von Witzleben, M.
AU  - Breuer, U.
AU  - Waser, R.
AU  - Neumann, C.
AU  - Valov, I.
TI  - Design of defect-chemical properties and device performance in memristive systems
AID  - 10.1126/sciadv.aaz9079
DP  - 2020 May 01
TA  - Science Advances
PG  - eaaz9079
VI  - 6
IP  - 19
4099  - http://advances.sciencemag.org/content/6/19/eaaz9079.short
4100  - http://advances.sciencemag.org/content/6/19/eaaz9079.full
SO  - Sci Adv2020 May 01; 6
AB  - Future development of the modern nanoelectronics and its flagships internet of things, artificial intelligence, and neuromorphic computing is largely associated with memristive elements, offering a spectrum of inevitable functionalities, atomic level scalability, and low-power operation. However, their development is limited by significant variability and still phenomenologically orientated materials’ design strategy. Here, we highlight the vital importance of materials’ purity, demonstrating that even parts-per-million foreign elements substantially change performance. Appropriate choice of chemistry and amount of doping element selectively enhances the desired functionality. Dopant/impurity-dependent structure and charge/potential distribution in the space-charge layers and cell capacitance determine the device kinetics and functions. The relation between chemical composition/purity and switching/neuromorphic performance is experimentally evidenced, providing directions for a rational design of future memristive devices.