Table 1 Comparison of ξDLj, θ, ρxx, σSH*(x) and calculated power and current consumption of SOT-MRAM devices for various strong spin current generators.

Here, we use a spin Hall channel (600 nm by 300 nm by 4 nm), an FeCoB free layer (190 nm by 30 nm by 1.8 nm; resistivity ≈ 130 microhm·cm), and the parallel resistor model for the illustrative calculation (see the Supplementary Materials for details on the power and current calculations). Power and current are normalized to that of the Pt0.6(MgO)0.4-based device. n.a., not applicable.

ξDLjθSHρxx
(microhm·cm)
σSH
[105 (ℏ/2e) ohm−1 m−1]
PowerCurrentReference
Pt0.6(MgO)0.40.28>0.73743.81.01.0This work
Pd0.25Pt0.750.26>0.6584.50.91.0(14)
Au0.25Pt0.750.3>0.6833.61.00.95(16)
Pt0.160.51334.91.21.6This work
Bi2Se33.5n.a.17552.02.60.3(46)
Pt0.5(MgO)0.50.310.662401.34.51.2This work
β-W0.3n.a.3001.07.11.3(43)
β-Ta0.12n.a.1900.63212.8(44)
BixSe1−x18.6n.a.130001.4250.4(47)